Cathodoluminescence studies of growth and process‐induced defects in bulk gallium antimonide

Cathodoluminescence studies of growth and process-induced defects in bulk gallium antimonide

The homogeneity and luminescence properties of undoped bulk GaSb have been studied by the cathodoluminescence ~CL! technique in the scanning electron microscope. CL images have revealed a nonuniform distribution of native defects in GaSb wafers prepared from as-grown single crystals. Postgrowth annealing in vacuum, gallium, and antimony atmospheres has been performed to obtain more accurate inf...

Self- and Zinc Diffusion in Gallium Antimonide

Cathodoluminescence and photoinduced current spectroscopy studies of defects in Cd0.8Zn0.2Te.

Deep levels in Cd12xZn xTe have not yet been fully characterized and understood, even though this material is very promising for medical and optoelectronic applications. We have investigated p-type semi-insulating Cd0.8Zn0.2Te with cathodoluminescence ~CL! and photoinduced current transient spectroscopy ~PICTS! methods. PICTS analyses allow detection of deep levels which are not revealed by oth...

Near-field cathodoluminescence studies on n-doped gallium nitride films

Cathodoluminescence spectra of gallium nitride nanorods

Gallium nitride [GaN] nanorods grown on a Si(111) substrate at 720°C via plasma-assisted molecular beam epitaxy were studied by field-emission electron microscopy and cathodoluminescence [CL]. The surface topography and optical properties of the GaN nanorod cluster and single GaN nanorod were measured and discussed. The defect-related CL spectra of GaN nanorods and their dependence on temperatu...